InGaAs Single- and Dual-Gate High-Speed FETs : Preparation and Performance

The preparation and performance of self-aligned single-and dual-gate InGaAs JFETs is discussed. Single-gate InGaAs JFETs exhibit maximum extrinsic transconductance of 350, 275 and 140 mS/mm at a gate length of 0.5, 1.5 and 3.5 ¿m, respectively. High overall potential barriers at the channel substrate heterointerface are necessary for control of threshold voltage uniformity over a wide range of gate lengths. For the first time device behaviour of self-aligned dual-gate InGaAs JFET is demonstrated.