DocumentCode
1944379
Title
Equilibrium Solubility of Arsenic and Antimony in Silicon
Author
Angelucci, R. ; Armigliato, A. ; Landi, E. ; Nobili, D. ; Solmi, S.
Author_Institution
CNR - Istituto LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
461
Lastpage
464
Abstract
Equilibrium solid solubility of arsenic and antimony in silicon is derived by Hall and resistivity measurements after suitable annealing. For both elements, the solubility shows a linear trend versus reciprocal temperature.
Keywords
Charge carrier density; Conductivity measurement; Diffusion processes; Heat recovery; Scattering; Semiconductor films; Silicon; Simulated annealing; Solid modeling; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436898
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