DocumentCode
1944772
Title
Statistical Analysis of Implant Angles Effects on Asymmetrical NMOSFETs Characteristics and Reliability
Author
Dars, P. ; d´Ouville, T.Ternisien ; Mingam, H. ; Merckel, G.
Author_Institution
CNET-CNS, BP 98, F-38243 Meylan Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
Statistical analysis of asymmetry in LDD NMOSFETs electrical characteristics shows the influence of implantation angles on non-overlap variation observed on devices realized on a 100 mm wafer and within the wafers of a batch. The study of the consequence of this dispersion on the aging behaviour illustrates the importance of this parameter for reliability and the necessity to take it in account for accurate analysis of stress results.
Keywords
Aging; Automatic testing; Dispersion; Electrostatic analysis; Fabrication; Implants; MOS devices; MOSFETs; Statistical analysis; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436916
Link To Document