Effects of spontaneous and piezoelectric polarisation on the photoresponsivity Of Ga- and N-faced AlGaN UV photodiodes

Author

Kuek, J.J. ; Pulfrey, D.L. ; Nener, B.D. ; Dell, J.M. ; Parish, G. ; Mishra, U.

Author_Institution

Dept. EEE, Univ. of Western Australia, Crawley, WA, Australia

Volume

1

fYear

2001

fDate

15-19 July 2001

Abstract

The effect of polarisation-induced charges on a p-GaN/i-Al/sub 0.33/Ga/sub 0.67/N/n-GaN UV-B photodiode structure is investigated and shown to reduce the sensitivity of the photodiode for wavelengths longer than the desired cutoff wavelength if the device is Ga-faced.

Keywords

III-V semiconductors; aluminium compounds; dielectric polarisation; gallium compounds; p-i-n photodiodes; photodetectors; semiconductor device models; ultraviolet detectors; wide band gap semiconductors; AlGaN; UV photodetector; UV-B photodiodes; Urbach width; absorption coefficients; minority electrons; minority holes; one-dimensional model; p-i-n photodiodes; photodiode sensitivity; piezoelectric polarisation effect; polarisation-induced charges; portable UV-B exposure monitors; solar-blind photodiode; spectral responsivity; spontaneous polarisation effect; valence band offset; Aluminum gallium nitride; Australia; Electromagnetic wave absorption; Gallium nitride; Lattices; PIN photodiodes; Photonic band gap; Piezoelectric polarization; Road transportation; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.967959

Filename

967959