DocumentCode
1945140
Title
Monte Carlo Simulation of Semiconductor Devices: A Critical Review
Author
Lugli, Paolo ; Jacoboni, Carlo
Author_Institution
Dipartimento di Fisica e Centro Interuniversitario di Struttura della Materia dell´´Universita´´ di Modena, Via Campi 213/A, 41100 Modena, Italy, Via Campi 213/A, 41100 Modena, Italia
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
97
Lastpage
101
Abstract
We present a critical discussion of the Monte Carlo simulation as applied to semiconductor device modelling. The advantages and limitations of such approach are discussed and compared with more traditional simulators. Critical points are pointed out and analyzed. A variety of applications to different structures is then outlined.
Keywords
Boundary conditions; Electromagnetic compatibility; Electrons; Electrostatics; Jacobian matrices; Monte Carlo methods; Particle scattering; Poisson equations; Semiconductor devices; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436933
Link To Document