DocumentCode
1945196
Title
Proposal of the novel strain evaluation method for nitride semiconductors by photocurrent spectroscopy
Author
Kumagai, Motohiro ; Saitoh, Takashi ; Kobayashi, Nao
Author_Institution
NTT Basic Res. Labs., Kanagawa, Japan
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
A novel strain evaluation method is proposed, which is based on the strain dependence of the excitonic transition energy. Comparing the excitonic transition energies measured by photocurrent spectroscopy with the calculated energies, c-axis strain in undoped GaN grown on SiC substrate was estimated to be -0.03%.
Keywords
III-V semiconductors; excitons; gallium compounds; photoconductivity; semiconductor epitaxial layers; wide band gap semiconductors; GaN-SiC; MO-VPE growth; SiC; SiC substrate; c-axis strain; epitaxial layer; excitonic transition energy; nitride semiconductors; photocurrent spectroscopy; strain dependence; strain evaluation method; undoped GaN; Absorption; Capacitive sensors; Energy measurement; Gallium nitride; Photoconductivity; Proposals; Silicon carbide; Spectroscopy; Strain measurement; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967962
Filename
967962
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