• DocumentCode
    1946111
  • Title

    Redistribution of Ion-Implanted Mercury During Rapid Thermal Annealing of Ga0.47 In0.53 As and InP

  • Author

    Wilkie, J.H. ; Sealy, B.J.

  • Author_Institution
    Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, England
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    117
  • Lastpage
    120
  • Abstract
    Rutherford backscattering (RBS) has been used to study the redistribution of ion-implanted mercury and the reordering of implantation damage during Rapid Thermal Annealing (RTA) of Ga0.47 In0.53As epilayers and bulk InP. Implantation at 200°C prevents amorphous layer formation and reduces the extent of Hg redistribution in both materials. Si3N4 and phosphosilicate glass (PSG) are compared as encapsulants for InP; it is suggested that silicon indiffusion enhanced by radiation damage may be the reason why p-type activity has only been seen for 200°C implanted material.
  • Keywords
    Amorphous materials; Backscatter; Gallium arsenide; Implants; Indium phosphide; Mercury (metals); Rapid thermal annealing; Sealing materials; Temperature; Thermal engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436981
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1946111