DocumentCode
1946120
Title
MEMs based reconfigurable dual behavior resonator using BCB technology in W-frequency range
Author
Vu, Thanh Mai ; Prigent, Gaetan ; Plana, Robert
Author_Institution
CNRS, LAAS, Toulouse, France
fYear
2009
fDate
June 28 2009-July 1 2009
Firstpage
1
Lastpage
4
Abstract
This paper presents a novel tuneable resonator topology from W-frequency band to V-frequency band. The resonator is developed on TFMS structure using RF-MEMs implemented in Si-BCB technology. Specific synthesis are developed and validated through electromagnetic simulations.
Keywords
micromechanical resonators; microwave circuits; network topology; MEMs based reconfigurable dual behavior resonator; Si-BCB technology; W-frequency range; tuneable resonator topology; Band pass filters; Capacitance; Centralized control; Distributed Bragg reflectors; Filtering theory; Frequency; Microwave devices; Topology; Transmission lines; Uninterruptible power systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems and TAISA Conference, 2009. NEWCAS-TAISA '09. Joint IEEE North-East Workshop on
Conference_Location
Toulouse
Print_ISBN
978-1-4244-4573-8
Electronic_ISBN
978-1-4244-4574-5
Type
conf
DOI
10.1109/NEWCAS.2009.5290442
Filename
5290442
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