Compact modeling of both n- and p-type ultrashort FinFETs

An explicit charge-based compact model for the drain current of ultranarrow and ultrashort FinFETs is presented. The model is dedicated to circuit design and is continuous from weak to strong inversion and from linear to saturation region. It is valid for channel length down to 25 nm and Fin width down to 3 nm. It takes into account important effects such as short-channel effects (SCEs), subthreshold slope (SS) degradation, drain-induced barrier lowering (DIBL), drain saturation voltage with velocity saturation, channel length modulation (CLM) and quantum mechanical effects (QMEs). The model accuracy is validated by comparison with 3-D numerical simulations.