• DocumentCode
    1946997
  • Title

    High-precision silicon differential pressure sensor monolithically integrated with twin diaphragms and micro over-range protection structures

  • Author

    Kato, Satoshi ; Watanabe, Tetsuya ; Kato, Chikako ; Suzuki, Yoshitaka ; Kamimura, Keiji ; Suzuki, Hiroshi ; Suzuki, Kentarou ; Hamanaka, Hitoshi ; Ikeda, Kyoichi

  • Author_Institution
    Micromaching Lab., Yokogawa Electr. Corp., Nagano, Japan
  • fYear
    2000
  • fDate
    23-27 Jan 2000
  • Firstpage
    347
  • Lastpage
    351
  • Abstract
    This paper describes a novel silicon differential pressure sensor that is fabricated using silicon surface micromachining, monolithically integrated with twin diaphragms, and has lateral openings for leading the substances the pressures of which are to be measured, and micro over-range protection structures. The two diaphragms that have piezo gauge resistors work complementarily to each other as a result of a difference in the respective pressures of fluids led through the lateral openings. The sensor linearity and errors caused by changes in ambient temperature and static pressure have been improved to less than 0.2%, and high zero-point long-term stability of less than 0.01% has been obtained. Throughout this paper we will demonstrate the design for differential pressure sensors and show experimental results
  • Keywords
    diaphragms; elemental semiconductors; micromachining; microsensors; pressure sensors; protection; silicon; Si; micro over-range protection structure; monolithic integration; piezo gauge resistor; silicon differential pressure sensor; surface micromachining; twin diaphragms; Bonding; Fabrication; Glass; Mechanical sensors; Pressure measurement; Protection; Semiconductor films; Sensor phenomena and characterization; Sensor systems; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on
  • Conference_Location
    Miyazaki
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-5273-4
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2000.838541
  • Filename
    838541