• DocumentCode
    1947049
  • Title

    Visible Light a-SiC Thin Film LED and its Application to New OE-Functional Elements

  • Author

    Hamakawa, Yoshihiro ; Kruangam, Dusit ; Okamoto, Hiroaki ; Takakura, Hideyuki

  • Author_Institution
    Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan.
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    135
  • Lastpage
    142
  • Abstract
    A visible-light injection-type electroluminescence thin film diode made of amorphous silicon carbide (a-SiC TFLED) has been developed. The device has a basic structure of p (a-SiC)/i (a-SiC)/n (a-SiC). The emission color could be controlled from red to green by adjusting the carbon content x in the a-Si1-x Cx luminescent i-layer. The brightness of 5 cd/m2 was obtained for the yellow LED with a forward injection current density of 200 mA/cm2. A series of technical data on the device fabrication technology, injection efficiency improvement and resulting device characteristics are presented, and discussed in relation to the carrier injection and recombination mechanisms. The developed a-SiC LED has some significant advantages over the conventional crystal LEDs, such as wide area, ease of fabricating integrated type multi-color or tunable color LEDs, and low cost. Utilizing these unique significances, new type of opto-electronic functional elements are proposed and discussed.
  • Keywords
    Amorphous silicon; Brightness; Carbon dioxide; Chemical elements; Current density; Electroluminescent devices; Fabrication; Light emitting diodes; Semiconductor thin films; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5437029