DocumentCode
1947130
Title
The next generation BSIM for sub-100nm mixed-signal circuit simulation
Author
Xi, Xuemei ; He, Jin ; Dunga, Mohan ; Lin, Chung-Hsun ; Heydari, Babak ; Wan, Hui ; Chan, Mansun ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
2004
fDate
3-6 Oct. 2004
Firstpage
13
Lastpage
16
Abstract
This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-charge-sheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.
Keywords
MOSFET; circuit simulation; mixed analogue-digital integrated circuits; semiconductor device models; silicon-on-insulator; 100 nm; BSIM; SOI; completely continuous current; device models; double-gate MOSFET; mixed-signal circuit simulation; noncharge sheet current; scaled CMOS technology; CMOS technology; Circuit simulation; Computational modeling; Computer simulation; Integrated circuit modeling; MOSFETs; Physics; Poisson equations; Radio frequency; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN
0-7803-8495-4
Type
conf
DOI
10.1109/CICC.2004.1358720
Filename
1358720
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