A test pattern to investigate the effect of capping layers on the hot carrier induced photon spectra of MOSFETs

Author

Lanzoni, M. ; Selmi, L. ; Bez, R. ; Manfredi, M.

Author_Institution

Bologna Univ., Italy

fYear

1994

fDate

22-25 Mar 1994

Firstpage

204

Lastpage

207

Abstract

In this paper we report the design and characterization of a simple test pattern suitable to investigate the main effects that the polysilicon gate and the passivation layers induce on the photon spectra emitted by silicon MOSFETs biased in the hot-carrier regime. By comparing of the measured data with numerical calculations of the optical transmittance of the layers covering the emission area we extracted the absorption coefficient of the gate polysilicon over a wide range of photon energies. The effect of the capping layers on the polarization of the emitted light is also discussed

Keywords

elemental semiconductors; hot carriers; insulated gate field effect transistors; light polarisation; luminescence of inorganic solids; passivation; semiconductor device testing; silicon; visible spectra of inorganic solids; MOSFETs; Si; absorption coefficient; capping layers; characterization; hot carrier induced photon spectra; light emission; optical transmittance; passivation layers; polarization; polysilicon gate; test pattern; Area measurement; Data mining; Energy measurement; Hot carrier effects; Hot carriers; MOSFETs; Passivation; Silicon; Stimulated emission; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303475

Filename

303475