DocumentCode
1947453
Title
Intrinsic Gate Capacitances and Large-Signal Transient Modeling of Thin-Film Accumulation-Mode P-Channel Soi Mosfets
Author
Gentinne, B. ; Flandre, D. ; Terao, A. ; Colinge, J.P.
Author_Institution
Microelectronics Lab., University Catholique de Louvain, Belgium
fYear
1992
fDate
6-8 Oct. 1992
Firstpage
52
Lastpage
53
Keywords
Analytical models; Capacitance measurement; MOSFETs; Microelectronics; SPICE; Semiconductor device modeling; Substrates; Thin film circuits; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1992. IEEE International
Conference_Location
Ponte Vedra Beach, FL
ISSN
1078-621X
Print_ISBN
0-7803-7439-8
Type
conf
DOI
10.1109/SOI.1992.664790
Filename
664790
Link To Document