• DocumentCode
    1947495
  • Title

    Effects of Epitaxial Growth and Subsequent Processing on Simox Soi Electrical Defect Density

  • Author

    McNamara, Jeanne M. ; Buller, James F.

  • Author_Institution
    Harris Semiconductor, Melbourne, FL
  • fYear
    1992
  • fDate
    6-8 Oct. 1992
  • Firstpage
    56
  • Lastpage
    57
  • Keywords
    Aluminum; Density measurement; Electric variables measurement; Epitaxial growth; Etching; Implants; Integrated circuit measurements; Ion implantation; Measurement standards; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1992. IEEE International
  • Conference_Location
    Ponte Vedra Beach, FL
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.1992.664792
  • Filename
    664792
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1947495