SRAM-based extraction of defect characteristics

Author

Khare, Jitendra ; Maly, Wojciech ; Griep, Susanne ; Schmitt-Landsiedel, Doris

Author_Institution

Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA

fYear

1994

fDate

22-25 Mar 1994

Firstpage

98

Lastpage

107

Abstract

In modern IC manufacturing, extraction of defect characteristics for yield estimation is of prime importance. Test structure based defect characterization procedures suffer from two drawbacks-wastage of silicon area and short-loop mode of operation. This paper presents a SRAM-based characterization methodology, which can eliminate both the above drawbacks. The application of this methodology is also illustrated by means of an industrial experiment, which indicates that the procedure can be applied to all defect types for which the SRAM monitor has a high resolution of diagnosis

Keywords

SRAM chips; integrated circuit manufacture; semiconductor process modelling; IC manufacturing; SRAM monitor; SRAM-based extraction; defect characteristics; defect types; diagnostic resolution; industrial experiment; yield estimation; Circuit faults; Computer aided manufacturing; Manufacturing industries; Modems; Monitoring; Random access memory; Semiconductor device manufacture; Silicon; Testing; Yield estimation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303494

Filename

303494