Advanced Nitrogen Preimplant Gate Oxide Technique for Suppression of RNWE and RSCE for 0.18 um CMOS Technology

Author

Huang, S.-F. ; Puchner, H. ; Kamath, A. ; Ho, B.

Author_Institution

LSI Logic Corporation, Santa Clara, CA, USA

Volume

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

200

Lastpage

203

Keywords

Boron; CMOS logic circuits; CMOS technology; Implants; Large scale integration; MOS devices; Nitrogen; Oxidation; Random access memory; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

Filename

1505474

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