DocumentCode
1949307
Title
Development of wafer level NCF (non conductive film)
Author
Nonaka, Toshihisa ; Fujimsru, Koichi ; Asahi, Noboru ; Kasumi, Ken-ichi ; Matsumoto, Yu.
Author_Institution
Toray Ind. Inc., Shiga
fYear
2008
fDate
27-30 May 2008
Firstpage
1550
Lastpage
1555
Abstract
The wafer level non conductive film (WL-NCF) has been developed, which has dynamic temperature dependence of viscosity. The b-stage WL-NCF was laminated onto the wafer without void, which has 870 Au bumps of 15 mum height and 25 mum pitch. The wafer with the WL-NCF on the surface was cut into chips by standard dicing process. The chip which has the NCF on the surface was bonded onto the ITO wired glass substrate by a flip chip bonder and the electrical connection was confirmed.
Keywords
adhesive bonding; gold; wafer-scale integration; Au; COG assembly process; ITO; ITO wired glass substrate; b-stage WL-NCF; chip on glass; dynamic temperature dependency; flip chip bonder; gold bump technology; size 15 mum; standard dicing process; viscosity; wafer level non conductive film; Assembly; Bonding processes; Conducting materials; Conductive films; Electrodes; Flip chip; Glass; Substrates; Temperature; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
Conference_Location
Lake Buena Vista, FL
ISSN
0569-5503
Print_ISBN
978-1-4244-2230-2
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2008.4550182
Filename
4550182
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