Epi Channel MOSFETs With Low Junction Capacitances

Author

Risch, Lothar ; Lustig, Bernhard ; Aeugle, Thomas ; Schäfer, Herbert

Author_Institution

Siemens AG, Munich, Germany

Volume

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

396

Lastpage

399

Keywords

Annealing; CMOS process; Capacitance; Doping profiles; Epitaxial growth; MOSFETs; Metallization; Silicidation; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

Filename

1505523

Link To Document