Impact of pre-amorphization for the reduction of contact resistance using laser thermal process

Author

Yamamoto, T. ; Goto, K. ; Kubo, T. ; Wang, Y. ; Lin, T. ; Talwar, S. ; Kase, M. ; Sugii, T.

Author_Institution

Fujitsu Labs. Ltd., Tokyo, Japan

fYear

2002

fDate

2-3 Dec. 2002

Firstpage

27

Lastpage

30

Abstract

In this paper, for the first time, we report the effect of pre-amorphization for the reduction of contact resistance of CoSi/sub 2/-Si using Laser Thermal Process (LTP). Owing to the lower melting point of pre-amorphized Si, we can achieve much lower contact resistance in the lower laser power conditions. And the larger junction leakage current and junction capacitance can be much reduced by combining pre-doping and pre-RTA technique with LTP.

Keywords

amorphisation; cobalt compounds; contact resistance; elemental semiconductors; laser materials processing; leakage currents; melting point; rapid thermal annealing; semiconductor doping; silicon; CoSi/sub 2/-Si; CoSi/sub 2/-Si contact resistance; RTA; junction capacitance; junction leakage current; laser thermal process; melting point; pre-amorphization; Amorphous materials; Conductivity; Contact resistance; Laboratories; Leakage current; Parasitic capacitance; Power lasers; Solids; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-028-3

Type

conf

DOI

10.1109/IWJT.2002.1225192

Filename

1225192