• DocumentCode
    1951280
  • Title

    Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS

  • Author

    Yoshikawa, S. ; Toujou, F. ; Homma, Y. ; Takenaka, H. ; Hayashi, S. ; Inoue, M. ; Goto, K. ; Shimizu, R.

  • Author_Institution
    Matsushita Technores. Inc., Moriguchi, Japan
  • fYear
    2002
  • fDate
    2-3 Dec. 2002
  • Firstpage
    47
  • Lastpage
    48
  • Abstract
    We are developing multilayer reference materials for shallow depth profiling in secondary ion mass spectrometry (SIMS). In this report, the potential of boron-nitride (BN)/silicon (Si) multilayers as the reference materials for shallow depth profiling is shown from the standpoint of SIMS analyses.
  • Keywords
    boron compounds; doping profiles; elemental semiconductors; secondary ion mass spectra; semiconductor superlattices; silicon; BN-Si; BN-delta doped multilayer reference materials; SIMS; secondary ion mass spectrometry; shallow depth profiling; Boron; Calibration; Electronic mail; Laboratories; Nonhomogeneous media; Performance analysis; Rough surfaces; Silicon; Sputtering; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-028-3
  • Type

    conf

  • DOI
    10.1109/IWJT.2002.1225199
  • Filename
    1225199
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1951280