Crossing point current of power P-i-N diodes: impact of lifetime treatment

Author

Vobecký, J. ; Hazdra, P. ; Humbel, O. ; Galster, N.

Author_Institution

Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic

Volume

2

fYear

2000

fDate

2000

Firstpage

625

Abstract

Crossing point current of forward I-V curves at 25 and 125°C was measured and simulated for 4.5 kV/320 A power P-i-N diodes irradiated by protons. To achieve agreement of electro-thermal simulation with experiment, temperature dependence of the capture coefficients C_n and C_p of the deep levels dominant in condition of heavy injection had to be taken into account. The proton irradiation is shown to decrease the crossing point current which is beneficial for paralleling of diodes under surge conditions

Keywords

carrier lifetime; deep levels; p-i-n diodes; power semiconductor diodes; proton effects; 125 C; 25 C; 320 A; 4.5 kV; capture coefficient; carrier injection; carrier lifetime; crossing point current; deep level; electrothermal simulation; forward I-V characteristics; power P-i-N diode; proton irradiation; temperature dependence; Charge carrier processes; Current distribution; P-i-n diodes; Photonic band gap; Protons; Semiconductor diodes; Surges; Switches; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.838768

Filename

838768