A 600V quick punch through (QPT) IGBT design concept for reducing EMI

Author

Yedinak, J. ; Gladish, J. ; Brockway, B. ; Shekhawat, S. ; Shenoy, P. ; Lange, D. ; Dolny, G. ; Rinehimer, M.

Author_Institution

Discrete Power Product Dev., Fairchild Semicond. Corp., Mountaintop, PA, USA

fYear

2003

fDate

14-17 April 2003

Firstpage

67

Lastpage

70

Abstract

Punch Through IGBTs inherently generate more EMI than their MOSFET counter part. This results from the nature of the IGBT being a two carrier device and the switching characteristics being controlled by the gain of the p-n-p bipolar. The EMI is a direct result of the abrupt turn-off di/dt. In this paper, a novel IGBT, the QPT, that enables the PT IGBT to switch similar to a MOSFET is presented and analyzed. This is achieved by designing the PT IGBT with a thinner lower concentration drift region. This allows the depletion layer to punch through to the buffer at a lower voltage. The capacitances of the QPT are optimized so that the channel remains open until the collector voltage reaches the bus voltage. This provides the ability to control and thereby minimize the turn-off di/dt.

Keywords

electromagnetic interference; insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; semiconductor device models; 600 V; EMI; QPT IGBT design; abrupt turn-off di/dt; bus voltage; carrier device; collector voltage; depletion layer; drift region; electromagnetic interference; insulated gate bipolar transistor; p-n-p bipolar; quick punch through; switching characteristic; Analytical models; Doping; Electromagnetic interference; Insulated gate bipolar transistors; MOSFET circuits; Medical simulation; Power MOSFET; Switches; Switching loss; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225232

Filename

1225232