DocumentCode
1952045
Title
Hydrogen Induced Positive Charging of Buried SiO/sub 2/
Author
Stesmans, A. ; Vanheusden, K.
Author_Institution
Department of Physics, Katholieke Universiteit Leuven, Belgium
fYear
1992
fDate
6-8 Oct. 1992
Firstpage
102
Lastpage
103
Keywords
Annealing; Capacitance-voltage characteristics; Chemical vapor deposition; Hydrogen; Kinetic theory; Paramagnetic resonance; Physics; Signal analysis; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1992. IEEE International
Conference_Location
Ponte Vedra Beach, FL
ISSN
1078-621X
Print_ISBN
0-7803-7439-8
Type
conf
DOI
10.1109/SOI.1992.664815
Filename
664815
Link To Document