High-frequency effects of Al-lossy lines in MCM-D on silicon substrate

Author

Gospodinova, Mika ; Arnaudov, Rumen ; Mollov, Valentin S. ; Philippov, Philip

Author_Institution

Dept. of Microelectron., Tech. Univ. Sofia, Bulgaria

Volume

2

fYear

2000

fDate

2000

Firstpage

751

Abstract

This paper discusses an experimental investigation of the behavior of high-speed Si/SiO₂/Al based microstrip, when an extra DC bias voltage is applied to the line. In order to reduce the insertion losses caused by the semiconductor substrate, we suggest a superposition of a DC biasing to the high-speed signal applied to the line. This way, the conductor line changes the surface properties of the semiconductor substrate. To provide the characterization of this effect a number of test structures containing a variety of microstrip asymmetric transmission lines were prepared. The obtained results suggest a way of controlling the performance and energy propagation of interconnects on semiconductor substrates. The studied effect can be successfully applied in high-speed blocks with tuning parameters

Keywords

MOS capacitors; S-parameters; aluminium; interconnections; losses; microstrip lines; multichip modules; silicon; silicon compounds; Al-lossy lines; MCM-D on silicon substrate; MOS lossy line; Si-SiO₂-Al; Si/SiO₂/Al based microstrip; distributed RLCG model; energy propagation; extra DC bias voltage; high-frequency effects; high-speed microstrip; insertion losses; interconnects on semiconductor substrate; microstrip asymmetric transmission lines; tuning parameters; Capacitance; Conductors; Insertion loss; Microstrip; Propagation losses; Quantum computing; Semiconductor materials; Silicon; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.838799

Filename

838799