DocumentCode
1952466
Title
Optimized device concepts for reverse blocking IGBTs
Author
Kapels, H. ; Drücke, D.
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2003
fDate
14-17 April 2003
Firstpage
148
Lastpage
151
Abstract
Properties and performance of different device structures for symmetric blocking IGBTs are described and compared to series connections of PT-IGBTs with Si-diodes and SiC Schottky diodes. Based on device simulations, optimized device structures for symmetric blocking NPT-IGBTs with planar and trench gate are performed. By using dielectric charge traps as new structure elements, even the good performance of Trench-IGBTs could be exceeded.
Keywords
electron traps; insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; semiconductor device models; Schottky diode; SiC; dielectric charge trap; optimized device concept; reverse blocking IGBT; structure element; symmetric blocking; trench gate; Anodes; Circuits; Insulated gate bipolar transistors; Inverters; Plasma devices; Plasma simulation; Schottky diodes; Silicon carbide; Switching loss; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225251
Filename
1225251
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