DocumentCode
1952522
Title
Well-tempered combination of ultra-high voltage IGBT and diode rated 6.5kV
Author
Suekawa, E. ; Inoue, M. ; Mochizuki, K. ; Kawakami, M. ; Minato, T. ; Satoh, K.
Author_Institution
Mitsubishi Electr. Corp., Fukuoka, Japan
fYear
2003
fDate
14-17 April 2003
Firstpage
160
Lastpage
163
Abstract
For High Voltage IGBT (HV-IGBT), it is required that a good matching with Free Wheeling Diode (FWD) is considered because of the latter´s high transient forward voltage. Therefore, we studied transient characteristics of the free wheel mode in HV-IGBT and FWD paired operation by computer simulation and experiment, and optimized design aspects of HV-IGBT/FWD combination, rated 6.5kV, to achieve very low forward voltage drop, low Eon and Eoff, and a wide Safety Operational Area (SOA).
Keywords
digital simulation; high-voltage techniques; insulated gate bipolar transistors; power semiconductor diodes; transients; 6.5 V; computer simulation; free wheeling diode; high transient forward voltage; low forward voltage drop; safety operational area; ultra-high voltage IGBT; Analytical models; Bridge circuits; Computer simulation; Conductivity; Insulated gate bipolar transistors; Latches; Low voltage; Semiconductor diodes; Switching circuits; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225254
Filename
1225254
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