DocumentCode
1952537
Title
High-density trench DMOSFETs employing two step trench techniques and trench contact structure
Author
Kim, Jongdae ; Kim, Sang-Gi ; Roh, Tae Moon ; Lee, Bun
Author_Institution
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fYear
2003
fDate
14-17 April 2003
Firstpage
165
Lastpage
168
Abstract
A novel process technique for fabricating trench DMOSFETs using 3 mask layers (trench, poly, metal), two step trench technique, and trench contact structure is realized in order to obtain cost-effective production capability, higher cell density, and better leakage characteristics. A unit cell with a cell pitch of 1.6 μm and a channel density of 130Mcell/in2 are obtained. The specific on-resistance was 0.28mΩ-cm2 with a blocking voltage of 43 V.
Keywords
leakage currents; masks; power MOSFET; semiconductor device measurement; 1.6 microns; 3 mask layer; 43 V; blocking voltage; cell density; cell pitch; channel density; high-density trench DMOSFET; leakage characteristic; production capability; specific on-resistance; trench contact structure; two step trench technique; Annealing; Boron; CMOS technology; Etching; Fabrication; Hydrogen; Ion implantation; MOSFETs; Silicon; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225255
Filename
1225255
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