DocumentCode
1952959
Title
Applying DMOSTs, diodes and thyristors above and below substrate in thin-layer SOI
Author
Swanenberg, M.J. ; Ludikhuize, A.W. ; Grakist, A.
Author_Institution
Philips Semicond., Nijmegen, Netherlands
fYear
2003
fDate
14-17 April 2003
Firstpage
232
Lastpage
235
Abstract
This paper reports on above- and below-substrate behavior of 120V LDMOSTs and on injecting bipolar-type devices like diodes, LIGBT´s and thyristors, integrated in A-BCD thin-layer SOI technology. The full isolation as obtained in SOI allows for novel IC applications; an example is shown which generates an output swing from +110V to -110V.
Keywords
MOS integrated circuits; MOSFET; isolation technology; semiconductor diodes; silicon-on-insulator; substrates; thyristors; 120 V; DMOSTs; IC application; full isolation; injecting bipolar-type device; substrate behavior; thin-layer SOI; Application specific integrated circuits; Bonding; Dielectric substrates; Isolation technology; Rails; Semiconductor diodes; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225271
Filename
1225271
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