Highly reliable p-LDMOSFET with an uneven racetrack source for PDP driver IC applications

Author

Roh, Tae Moon ; Lee, Dae Woo ; Kim, Sang-Gi ; Park, Il-Yong ; Kwon, Sung Ku ; Yang, Yil Suk ; Yu, Byoung Gon ; Kim, Jongdae

Author_Institution

Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

2003

fDate

14-17 April 2003

Firstpage

236

Lastpage

239

Abstract

The electrical characteristics of p-LDMOSFETs with uneven racetrack source (URS) and conventional racetrack source (CRS) before and after electrical DC stress were investigated to improve hot carrier immunity for PDP driver. The breakdown voltage of p-LDMOSFET with URS in on-state was about 30% higher than that of p-LDMOSFET with CRS at on-state. The variations of threshold voltage (V_t), maximum transconductance (g_mmax), saturated drain current (I_DSsat) of p-LDMOSFET with URS after electrical DC stress were much lower than those of p-LDMOSFET with CRS. The variation of specific-on resistance (R_on) of p-LDMOSFET with URS after stress was much lower than that of p-LDMOSFET with CRS.

Keywords

driver circuits; power MOSFET; power integrated circuits; PDP driver IC application; breakdown voltage; conventional racetrack source; electrical DC stress; electrical characteristic; highly reliable p-LDMOSFET; hot carrier immunity; maximum transconductance; saturated drain current; specific-on resistance; threshold voltage; uneven racetrack source; Application specific integrated circuits; Current density; Degradation; Driver circuits; Hot carrier effects; Hot carriers; MOSFET circuits; Moon; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225272

Filename

1225272