• DocumentCode
    1953094
  • Title

    An asymmetric dielectric-strip loaded Y-junction wavelength demultiplexer by K/sup +/-Na/sup +/ ion exchange in glass

  • Author

    Xiang, F. ; Yip, G.L.

  • Author_Institution
    Dept. of Electr. Eng., McGill Univ., Montreal, Que., Canada
  • fYear
    1997
  • fDate
    11-13 Aug. 1997
  • Firstpage
    56
  • Lastpage
    57
  • Abstract
    Summary form only given. There has been growing interest in glass waveguide wavelength demultiplexers for applications in optical fiber communication systems. The device to be presented is shown to consist of two waveguide branches are made by K/sup +/-Na/sup +/ ion exchange with its arm 2 cladded by an Al/sub 2/O/sub 3/ layer. The demultiplexing is based on the difference in the dispersion characteristics of the two asymmetric branches. In a previous paper the difficulties were mainly with the deposition of a reliable Al/sub 2/O/sub 3/ layer. In this paper, we will present a much improved BPM design simulations, fabrication techniques and performance figures of this device.
  • Keywords
    claddings; demultiplexing equipment; ion exchange; optical design techniques; optical dispersion; optical fabrication; optical fibre communication; optical glass; optical waveguides; potassium; sodium; symmetry; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ layer; BPM design simulations; K-Na; K/sup +/-Na/sup +/ ion exchange; asymmetric branches; asymmetric dielectric-strip loaded Y-junction wavelength demultiplexer; demultiplexing; dispersion characteristics; fabrication techniques; glass; glass waveguide wavelength demultiplexers; optical fiber communication systems; performance figures; reliable Al/sub 2/O/sub 3/ layer; waveguide branches; Arm; Demultiplexing; Dielectrics; Erbium; Fabrication; Laboratories; Optical fiber dispersion; Optical waveguides; Photonics; Strips;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
  • Conference_Location
    Montreal, Que., Canada
  • Print_ISBN
    0-7803-3891-X
  • Type

    conf

  • DOI
    10.1109/LEOSST.1997.619176
  • Filename
    619176