Lattice Wigner simulations of quantum devices

Current quantum kinetic Wigner formalisms are single valley models which solve for the distribution function parallel to the applied electric field. However, we find that the quantum distribution function in the transverse momentum direction is also very important in getting the device characteristics correctly. This is demonstrated using a non-parabolic, multiple valley Lattice Wigner function model. The results even apply to the very simple case of homogeneous semiconductor material under a uniform electric field.<>