• DocumentCode
    1953761
  • Title

    High gain monolithic 4H-SiC Darlington transistors

  • Author

    Tang, Yi ; Chow, T. Paul

  • Author_Institution
    Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2003
  • fDate
    14-17 April 2003
  • Firstpage
    383
  • Lastpage
    386
  • Abstract
    An epi-base, implanted-emitter monolithic 4H-SiC Darlington transistor which shows a peak common emitter current gain of ∼ 450 is reported. The forward drop at 50A/cm2 is around 7V. The inter-stage isolation is achieved with trenches filled with oxide. Isolation trench deeper than the base-collector junction is needed to effectively isolate the two BJT stages.
  • Keywords
    bipolar transistors; isolation technology; monolithic integrated circuits; silicon compounds; wide band gap semiconductors; Darlington transistors; epi-base 4H-SiC transistor; high gain 4H-SiC transistors; implanted-emitter 4H-Sic transistor; inter-stage isolation; monolithic 4H-SiC transistors; oxide filled trenches; trench isolation; Annealing; Bipolar transistors; Doping; Etching; Fabrication; Implants; Semiconductor optical amplifiers; Silicon carbide; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
  • Print_ISBN
    0-7803-7876-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.2003.1225307
  • Filename
    1225307
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1953761