DocumentCode
1953822
Title
A physical SiGe-base HBT model for circuit simulation and design
Author
Hong, G.-B. ; Fossum, J.G. ; Ugajin, M.
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
577
Lastpage
580
Abstract
A physical compact model for the SiGe-base HBT is presented. The model, implemented in SPICE2, accounts for the carrier transport in the heterostructural base, including explicit dependences on nonuniform doping density as well as energy gap. The model is verified based on HBTs from an aggressive SiGe-base technology, and device and circuit simulations are discussed, giving insight regarding optimal design of the technology.<>
Keywords
Ge-Si alloys; SPICE; digital simulation; energy gap; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; SPICE2; SiGe; SiGe-base HBT model; carrier transport; circuit simulation; device simulations; energy gap; heterostructural base; nonuniform doping density; optimal design; physical compact model; Germanium alloys; Heterojunction bipolar transistors; SPICE; Semiconductor device modeling; Semiconductor materials; Silicon alloys; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307428
Filename
307428
Link To Document