Low phase-noise HEMT microwave voltage-controlled oscillator

Author

Ulansky, Vladimir

Author_Institution

Dept. of Electr. & Electron. Eng., Al Fateh Univ., Tripoli, Libya

fYear

2011

fDate

25-27 Aug. 2011

Firstpage

55

Lastpage

58

Abstract

This paper presents a novel negative differential resistance (NDR) voltage-controlled oscillator (VCO) for microwave applications. The VCO circuit comprises a high electron mobility field-effect transistor (HEMT) and a p-channel metal-oxide-semiconductor transistor (PMOST) current mirror (CM). The mathematical model of the proposed VCO is developed. The designed VCO uses a pseudomorphic HEMT NE3210S01 and four 0.18 μm PMOSTs. The implemented 275.87 MHz oscillator draws 4.2 mA from a 3.3 V power supply and generates low-noise low-distortion signal.

Keywords

MOSFET; high electron mobility transistors; voltage-controlled oscillators; NDR voltage-controlled oscillator; VCO circuit; current 4.2 mA; frequency 275.87 MHz; high electron mobility field-effect transistor; low phase-noise HEMT microwave voltage-controlled oscillator; low-noise low-distortion signal; microwave applications; novel negative differential resistance; p-channel metal-oxide-semiconductor transistor current mirror; pseudomorphic HEMT NE3210S01; size 0.18 mum; HEMTs; Microwave circuits; Microwave oscillators; Microwave transistors; Voltage-controlled oscillators; current mirror; high electron mobility transistor; phase-noise; voltage-controlled oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar and Remote Sensing Symposium (MRRS), 2011

Conference_Location

Kiev

Print_ISBN

978-1-4244-9641-9

Type

conf

DOI

10.1109/MRRS.2011.6053600

Filename

6053600