Multi-terminal light emitting logic device electrically reprogrammable between OR and NAND functions

Author

Mastrapasqua, M. ; Luryi, S. ; Belenky, G.L. ; Garbinski, P.A. ; Cho, A.Y. ; Sivco, D.L.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

659

Lastpage

662

Abstract

A monolithic multi-terminal logic device that functions both optically and electrically as an "ORNAND" gate, is demonstrated for the first time. The device, based on the real-space transfer of hot electrons into a complementary collector layer, has been implemented in MBE-grown InGaAs-InAlAs heterostructure. Excellent performance is obtained at room temperature. The output current and optical power both exhibit OR and NAND functions of voltages of any two of the three input terminals, these functions being interchangeable by the voltage on the third terminal.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; indium compounds; light emitting devices; logic gates; molecular beam epitaxial growth; optical logic; InGaAs-InAlAs; MBE-grown heterostructure; NAND function; OR function; ORNAND gate; complementary collector layer; electrically reprogrammable device; hot electron transfer; light emitting logic device; monolithic multiterminal logic device; Aluminum compounds; Epitaxial growth; Gallium compounds; Hot carriers; Indium compounds; Optical logic devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307447

Filename

307447