DocumentCode
1954223
Title
High-performance bottom-gate poly-Si/SiN TFTs on glass-substrate
Author
Shimizu, K. ; Sugiura, O. ; Matsumura, M.
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
669
Lastpage
672
Abstract
Bottom-gate poly-Si/SiN TFTs have been presented with extremely high electron mobility of more than 300 cm/sup 2//Vs on a glass-substrate, for the first time. These TFTs can be produced by the standard process for the bottom-gate a-Si/SiN TFTs with only two additional excimer-laser annealings, that is, the laser pre-annealing of the SiN gate and the dual-beam annealing of an active thin silicon layer.<>
Keywords
glass; insulated gate field effect transistors; laser beam annealing; silicon; silicon compounds; thin film transistors; Si-SiN; SiN gate; TFTs; active thin Si layer; bottom-gate poly-Si/SiN device; dual-beam annealing; excimer-laser annealings; glass-substrate; high electron mobility; polysilicon; Glass; Insulated gate FETs; Laser annealing; Silicon; Silicon compounds; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307449
Filename
307449
Link To Document