DocumentCode
1954410
Title
Modeling hot carrier reliability of MOSFET: what is necessary and what is possible?
Author
Hansch, W.
Author_Institution
Siemens Components Inc., Iselin, NJ, USA
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
717
Lastpage
720
Abstract
The components of a simulation tool for a self-consistent calculation of DC hot electron device degradation are discussed. The tool is based on the drift diffusion approximation including one of its generalizations. It includes carrier injection into the gate oxide, trapping and detrapping of oxide charges and interface states, and their feed back onto the device field.<>
Keywords
digital simulation; electron traps; hole traps; insulated gate field effect transistors; interface electron states; reliability; semiconductor device models; DC hot electron device degradation; MOSFET; carrier injection; detrapping; device field; drift diffusion approximation; gate oxide; hot carrier reliability; interface states; modeling; oxide charges; self-consistent calculation; simulation tool; trapping; Charge carrier lifetime; Insulated gate FETs; Interface phenomena; Reliability; Semiconductor device modeling; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307459
Filename
307459
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