Electron bombarded semiconductor gain in CVD diamond

Author

Lin, B.-Y. ; Beetz, C.P. ; Winn, D.R. ; Segall, K.

Author_Institution

Adv. Technol. Mater. Inc., Danbury, CT, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

747

Lastpage

750

Abstract

Diamond films with metal electrodes were evaluated for use as an electron bombarded semiconductor (EBS) target gain medium for hybrid vacuum-semiconductor amplifier applications, such as hybrid photomultiplier tubes (PMT) or hybrid vacuum tube amplifiers. In this report we present: (1) measurements of electron-bombarded semiconductor (EBS) gain in synthetic CVD diamond thin films, (2) robustness characteristics of the diamond EBS detectors to high temperature cesiation, and (3) effects of electron beam damage. We conclude that diamond is a superior EBS material for high temperature/high power bandwidth applications.<>

Keywords

CVD coatings; amplification; diamond; electron beam effects; electron bombarded semiconductor devices; photomultipliers; semiconductor thin films; vacuum tubes; C; diamond EBS detectors; electron beam damage; electron bombarded semiconductor target gain medium; hybrid photomultiplier tubes; hybrid vacuum tube amplifiers; hybrid vacuum-semiconductor amplifier applications; synthetic CVD diamond thin films; CVD; Coatings; Diamond; Electron radiation effects; Electron tubes; Electron-beam semiconductor devices; Photomultipliers; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307466

Filename

307466