DocumentCode
1955293
Title
Quality of Gate Oxides Grown on State of the Art Simox and Zmr Soi Substrates
Author
Karulkar, Prarnod C.
Author_Institution
MIT Lincoln Laboratory, Lexington, MA
fYear
1992
fDate
6-8 Oct. 1992
Firstpage
158
Lastpage
159
Keywords
Contamination; Design for quality; Electric breakdown; Laboratories; MOSFETs; Materials reliability; Oxidation; Pollution measurement; Silicon on insulator technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1992. IEEE International
Conference_Location
Ponte Vedra Beach, FL
ISSN
1078-621X
Print_ISBN
0-7803-7439-8
Type
conf
DOI
10.1109/SOI.1992.664839
Filename
664839
Link To Document