DocumentCode
1955380
Title
Movpe Growth of InGaAs/lnAIAs Using Trimethylamine Alane Four Photonic and Electronic Devices
Author
Kohzen, A. ; Tohmori, Y. ; Akatsu, Y.
Author_Institution
NTT Opto-electronics Laboratories, Japan
fYear
1992
fDate
8-11 Jun 1992
Firstpage
2
Lastpage
3
Keywords
Artificial intelligence; Epitaxial growth; Epitaxial layers; HEMTs; Indium compounds; Indium gallium arsenide; Lattices; MODFETs; Quantum well devices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664846
Filename
664846
Link To Document