• DocumentCode
    1955823
  • Title

    Modeling of radiating effects in transistors

  • Author

    Aldamzharov, K.B. ; Tuyakbayev, A.A. ; Tuyakbayev, D.A.

  • Author_Institution
    Acad. of the Civil Aviation, Almaty, Kazakhstan
  • fYear
    2011
  • fDate
    25-27 Aug. 2011
  • Firstpage
    371
  • Lastpage
    373
  • Abstract
    In this work the single-level model for determination of the constant of radiating change of lifetime of minority carriers in the base of n-p-n transistors, also DLTS spectra in the base area of n-p-n transistors are modeled and results of calculations are obtained.
  • Keywords
    bipolar transistors; p-n heterojunctions; radiation effects; DLTS spectra; bipolar transistor; minority carrier; n-p-n transistor; radiating change; radiating effect; single-level model; Alloying; Boron; Charge carriers; Radiation effects; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwaves, Radar and Remote Sensing Symposium (MRRS), 2011
  • Conference_Location
    Kiev
  • Print_ISBN
    978-1-4244-9641-9
  • Type

    conf

  • DOI
    10.1109/MRRS.2011.6053677
  • Filename
    6053677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1955823