Photon emission from 70 nm gate length MOSFETs

The photon emission from extremely small size MOSFETs with L/sub G/=70 nm is observed for the first time. It is found that the electron temperature of the hot electrons monotonously increases while the substrate current to drain current ratio which is related to the avalanche multiplication factor initially increases and then decreases due to the latch effect caused by the parasitic bipolar transistor action as the gate length is reduced from 500 nm to 70 nm. The number of photons emitted with a higher energy has more intimate relation with the charge pumping current change caused by the hot-carrier generated interface states. It is shown that the photon emission is more effective for evaluating the hot carrier phenomenon than the substrate current when the gate length is smaller and the drain voltage is higher.<>