Integration of CMOS Logic Circuits with Lateral Power MOSFET

This paper describes the CMOS logic circuit which is composed with LDMOSFET. Compared to a conventional MOSFET, the proposed LDMOSFET is considered to show a high power tolerance in CMOS inverter circuit and be well adaptable in display driver circuits which require high breakdown voltage and trans-conductance. The channel in LDMOSFET encloses a junction-type source and is an important parameter for determining the transfer characteristics of CMOS inverter. Electrical characteristics of CMOS inverter with LDMOSFETs are studied by using TCAD MEDICI simulator. The voltage transfer characteristics and on-off switching properties are examined. The digital logic levels of the output voltages are analyzed from the transfer curves and circuit operation. The high and low logic voltages show a strong dependency on the channel doping concentration. The CMOS circuit in a display driver circuit shows a large power handling capability with low ON conductance.