Photon emission study of ESD protection devices under second breakdown conditions

Author

Ishizuka, Hiroyasu ; Okuyama, Kousuke ; Kubota, Katsuhiko

Author_Institution

Hitachi Yonezawa Electron. Co. Ltd., Yamagata, Japan

fYear

1994

fDate

11-14 April 1994

Firstpage

286

Lastpage

291

Abstract

The relationship between ESD performance and photon emission from MOSFETs under breakdown conditions has been studied for various drain structures. Since ESD protection level is well correlated with current driveability in the second breakdown region, observation of the spatial distribution of photon emission provides new insight to the understanding of breakdown behaviors resulting in different ESD performance. The photon emission study revealed that the three-dimensional progression of breakdown behaviors depends on drain structures and are correlated with ESD performance.<>

Keywords

electric breakdown of solids; electrostatic discharge; insulated gate field effect transistors; luminescence; protection; ESD protection devices; MOSFETs; drain structures; photon emission; second breakdown conditions; spatial distribution; Breakdown voltage; Degradation; Electric breakdown; Electrostatic discharge; Hot carriers; MOSFETs; Optical filters; Photonic integrated circuits; Protection; Semiconductor device breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1357-7

Type

conf

DOI

10.1109/RELPHY.1994.307822

Filename

307822