Carrier lifetime extraction in fully-depleted SOI devices

Author

Ernst, T. ; Cristoloveanu, S. ; Vandooren, A. ; Colinge, J.-P. ; Rudenko, T.E.

Author_Institution

Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France

fYear

1998

fDate

5-8 Oct. 1998

Firstpage

21

Lastpage

22

Abstract

A special current peak in P/sup +/P/sup -/N/sup +/ dual-gate diodes is observed, simulated and analytically modeled. A new simple experimental method to characterize the recombination mechanism and lifetime in fully depleted diodes is proposed, by considering that recombination occurs in the whole body of the device. The new method allows for quick characterization of carrier lifetime, which is a relevant parameter for SOI wafer quality.

Keywords

carrier lifetime; electron-hole recombination; quality control; semiconductor device models; semiconductor device testing; semiconductor diodes; silicon-on-insulator; SOI wafer quality; Si-SiO/sub 2/; analytical model; carrier lifetime; carrier lifetime extraction; current peak; device body recombination; dual-gate diodes; fully depleted diodes; fully-depleted SOI devices; recombination mechanism; Charge carrier lifetime; Diodes; Doping; Electric potential; Electrons; Linear predictive coding; Pulse measurements; Semiconductor films; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1998. Proceedings., 1998 IEEE International

Conference_Location

Stuart, FL, USA

ISSN

1078-621X

Print_ISBN

0-7803-4500-2

Type

conf

DOI

10.1109/SOI.1998.723083

Filename

723083