DocumentCode
1957182
Title
Structure Analysis of ZnS-SiO2 Thin Film and Patterning by Heat-Mode Lithography
Author
Miura, Hiroshi ; Iwata, Noriyuki ; Toyoshima, Nobuaki ; Hayashi, Yoshitaka ; Takeuchi, Kohji ; Mori, Tetsuji ; Hirosawa, Ichiro
Author_Institution
RICOH Co. Ltd., Yokohama
fYear
0
fDate
0-0 0
Firstpage
129
Lastpage
131
Abstract
A tetrahedral network structure like ZnS crystal is found to exist in the amorphous ZnS-SiO2 thin film. It is considered that the etching selectivity in as-deposited and annealed ZnS-SiO2 thin film becomes large due to the growth of ZnS crystals by annealing. There is optimum mixture rate of ZnS for patterning of Zns-SiO2 thin film by the heat-mode lithography, and the ZnS-SiO2 dots with clear and smooth edges were formed with increasing in the ZnS mixture rate to 80%
Keywords
amorphous state; etching; laser beam annealing; noncrystalline structure; optical disc storage; optical films; optical materials; photoresists; silicon compounds; zinc compounds; ZnS-SiO2; amorphous ZnS-SiO2 thin film; annealing; etching selectivity; heat-mode lithography; patterning; tetrahedral network structure; Annealing; Lithography; Optical films; Pattern analysis; Sputtering; Substrates; Transistors; Wet etching; X-ray scattering; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Data Storage Topical Meeting, 2006
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9494-1
Type
conf
DOI
10.1109/ODS.2006.1632741
Filename
1632741
Link To Document