DocumentCode
1957258
Title
Building reliability into a high performance 4-level metallization system
Author
Dreyer, M.L. ; Mobr, J. ; Zirkie, T.
Author_Institution
Adv. Metallization Reliability Eng., Motorola Inc., Mesa, AZ, USA
fYear
1994
fDate
11-14 April 1994
Firstpage
1
Lastpage
11
Abstract
Building reliability into MLM systems implies an a priori understanding of the mechanisms leading to failure for a given metallization technology. We present one approach to ´building-in reliability´, by developing a database of electro- and stress-migration, and microstructural data for several Al-Cu(1.5%):Ti-W metallurgies. By performing experiments that exceed the targets for a given technology, the key process and design parameters impacting reliability for subsequent technologies were identified. In this paper we present experimental results obtained developing this database. We also show the development of a simple predictive model, for lines and vias, based on the key process and design parameters. Our results highlight one approach used to develop a building-in reliability capability for complex MLM interconnect systems.<>
Keywords
circuit reliability; electromigration; failure analysis; integrated circuit technology; metallisation; Al-Cu(1.5%):Ti-W metallurgies; AlCu-TiW; MLM interconnect systems; building-in reliability; database; design parameters; electro-migration; failure; four-level metallization; microstructure; predictive model; stress-migration; Computer simulation; Databases; Integrated circuit interconnections; Integrated circuit reliability; Metallization; Physics; Process design; Product development; Reliability engineering; Sprites (computer);
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1357-7
Type
conf
DOI
10.1109/RELPHY.1994.307865
Filename
307865
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