• DocumentCode
    1957777
  • Title

    A room temperature electrically pumped 1.3-µm InAs quantum dot laser monolithically grown on silicon substrates

  • Author

    Lee, A.D. ; Wang, T. ; Pozzi, F. ; Seeds, A.J. ; Liu, H.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
  • fYear
    2011
  • fDate
    14-16 Sept. 2011
  • Firstpage
    184
  • Lastpage
    186
  • Abstract
    We present a room-temperature 1.3-μm InAs/GaAs quantum dot laser monolithically grown on Si(100). The threshold current at 20°C was 725A/cm2 and the emission wavelength was 1.302μm. The laser was operated in pulsed mode. The growth was enabled via the optimisation of the temperature of the initial nucleation layer of GaAs.
  • Keywords
    III-V semiconductors; indium compounds; integrated optics; laser modes; nucleation; optical pumping; quantum dot lasers; semiconductor growth; InAs; Si; emission wavelength; monolithic growth; nucleation layer; pulsed mode; room temperature electrically pumped quantum dot laser; silicon substrates; temperature 20 degC; temperature 293 K to 298 K; temperature optimisation; threshold current; wavelength 1.302 mum; Gallium arsenide; Laser modes; Photonics; Quantum dot lasers; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2011 8th IEEE International Conference on
  • Conference_Location
    London
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-8338-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2011.6053757
  • Filename
    6053757
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1957777