DocumentCode
1957914
Title
A `Bottom-up´ Redefinition for Mobility and the Effect of Poor Tube-Tube Contact on the Performance of CNT Nanobundle Thin Film Transistors
Author
Pimparkar, Ninad ; Alam, Muhammad Ashraful
Author_Institution
Purdue Univ., Lafayette
fYear
2007
fDate
18-20 June 2007
Firstpage
17
Lastpage
18
Abstract
In this paper, we show that (a) the randomness of mobility of NB-TFT (muNB) is not intrinsic, but rather signals the breakdown of ´top-down´ definition muNB and a percolation-theory based ´bottom-up´ definition of muNB can consistently interpret the results, and (b) the difference between mut and muNB can be attributed to geometrical parameters of transistor such as tube density, tube length, channel length, etc. and tube-tube contact. Our results not only provide specific guidance to achieve geometry-specific theoretical limits of muNB, but also suggest simple characterization of technology-critical tube-tube contact from a few simple measurements.
Keywords
carbon nanotubes; carrier mobility; nanoelectronics; nanotube devices; semiconductor device models; thin film transistors; CNT nanobundle thin film transistor performance; NB-TFT design; NB-TFT mobility; bottom-up redefinition; channel length; geometrical parameters; percolation-theory; tube density; tube length; tube-tube contact effect; Computer displays; Computer networks; Conducting materials; Contacts; High performance computing; Intelligent networks; Niobium; Poisson equations; Silicon; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373630
Filename
4373630
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